891: How Silicon Carbide is Revolutionizing Renewable Energy | with Infineon Technologies’ Daniel Dalpiaz and Navid Riaz

High-voltage power semiconductor technology is undergoing a significant transformation through new silicon carbide (SiC) packaging that drastically reduces physical size while enhancing performance. Infineon Technologies leaders Daniel Dalpiaz and Navid Riaz highlight a new package that fits in half the space of a deck of cards yet replaces traditional masonry-brick-sized components. This innovation enables higher power density and frequency, supporting voltages exceeding 2000 volts with 20 times the reliability of current industry solutions. By utilizing advanced interconnect technology and flexible pin grids, these devices minimize parasitic losses and noise, making them critical for the next generation of data centers, renewable energy systems, and grid infrastructure. This shift toward miniaturization and increased power cycling capacity allows for more efficient power conversion across diverse applications, from solar rooftops to utility-scale energy storage.